t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 1 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c available 1500 watt l ow clamping f actor transient v oltage s uppressor screening in reference to mil - prf - 19500 available description do - 13 (do - 202aa) package this transie nt voltage suppressor (tvs) series for 1n635 8 through 1n6372 are jedec registered selections for both unidirectional and bidirectional devices. the 1n635 8 through 1n6364 are unidirectional and the 1n636 6 through 1n6372 are bidirectional where they all provide a very low specified clamping factor for minimal clamping voltages (v c ) above their respective breakdown voltages (v br ) as specified herein. they are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as f ound in lower surge levels of iec61000 -4-5 . they are also very successful in protecting airborne avionics and electrica l systems. since their response time is virtually instantaneous, they can al so protect from esd and eft p er iec61000 -4- 2 and iec61000 -4-4. important: for the latest information, visit our website http://www.microsemi.com . features ? unidirectional and bidirectional tvs series in axial package for thru - hole mounti ng. ? suppresses transients up to 1500 watts @ 10/1000 s (see f igure 1 ). ? t clamping (0 volts to v (br) min): unidirectional C less than 100 picoseconds. bidirectional C less than 5 nanoseconds . ? working voltage (v wm ) range 10 v to 4 5 v. ? low clamping factor (ratio of actual v c /v br ): 1.33 @ full rated power and 1.20 @ 50% rated power . ? hermetic ally sealed do - 13 metal package. ? upscreening in reference to mil - prf - 19500 is available . ? rohs compliant versions available. applica tions / benefits ? designed to protect b ipolar and mos m icroprocessor based systems ? protection from switching transients and induced rf. ? protection from esd & eft per iec 61000 -4- 2 and iec 61000 -4- 4. ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance: class 1 , 2 & 3 : 1n6 35 8 to 1n6 3 72 class 4: 1n6 35 8 to 1n6 362 and 1n6366 to 1n6370 ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1 & 2 : 1n635 8 to 1n6372 class 3: 1n635 8 to 1n6362 and 1n6366 to 1n6370 class 4: 1n635 8 and 1n6366 ? secondary lightning protection per iec61000 -4- 5 with 2 o hms source impedance: class 2: 1n635 8 to 1n6361 and 1n6366 to 1n6369 class 3: 1n635 8 and 1n6366 ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 -2 600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 oc thermal resistance, junction to lead @ 0.375 inch (10 mm) from body r ? jl 50 oc/w thermal resistance, junction to ambient (1) r ? ja 110 oc/w peak pulse power @ t l = +25 oc (2) p pp 1500 w rated average power dissipation @ t l +125 oc (3) p m(av) 1 w solder temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. at 10/1000 s with repetition rate of 0.01% or less (see f igures 1, 2, & 4 ). 3. at 3/8 inch (10 mm) from body (see derating in f igure 5 ). tvs devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (v wm ) except for transients that briefly drive the device into avalanche breakdown (v br to v c region) . downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 2 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c mechanical and packaging ? case: do - 13 (do - 202aa), welded, hermetically sealed metal and glass . ? terminals: a ll external metal surfaces are tin -l ead plated or rohs compliant annealed matte - tin plating solderable per mil - std - 750 method 2026 . ? marking: part number and polarity diode symbol . ? polarity: cathode connected to case and polarity indicated by diode symbol . ? tape & reel option: standard per eia - 296 (add tr suffix to part number) . consult factory for quantities. ? weight: approx imately 1.4 grams. ? see p ackage d imensions on last page. part nomenclature mq 1n 6 35 8 (e3) reliability level mq (reference jan) mx (reference jantx) mv (reference jantxv) cds (reference jans) blank = commercial rohs compl iance e3 = rohs c ompliant blank = non - rohs c ompliant jedec type number ( see electrical characteristics t able ) symbols & definitions symbol definition v wm standoff voltage: applied reverse voltage to assure a nonconductive condition. v (br) breakdown voltage: this is the breakdown voltage the device will exhibit at 25 o c. v c maximum clamping voltage: the maximum peak voltage appearing across the tvs when subject ed to the peak pulse current in a one millisecond time interval. the peak pulse voltage is the combination of vo ltage rise due to both the series resistance and thermal rise and positive temperature coefficient ( v(br) ). i pp peak pulse current: the peak current during the impulse . (see f igure 2 ) p pp peak pulse power: the pulse power as determined by the product of v c and i pp . i d standby current: the current at the standoff voltage (v wm ). downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 3 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c electrical characteristics @ 25 o c ( both polarities) unidirectional micr osemi part number standoff voltage (note 1) v wm v olts maximum reverse leakage @v wm i d a minimum* breakdown voltage @ 1.0 ma v (br) (min) v olts maximum clamping voltage (fig. 2) i pp1 = 1a v c v olts maximum clamping voltage (fig. 2) @ i pp2 = 10a v c v olt s maximum peak pulse current i pp3 a 1n6358 1n6359 1n6360 mpt - 10 mpt - 12 mpt - 15 10.0 12.0 15.0 2 2 2 11.7 14.1 17.6 13.7 16.1 20.1 14.1 16.5 20.6 90 70 60 1n6361 1n6362 1n6363 1n6364 mpt - 18 mpt - 22 mpt - 36 mpt - 45 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.2 29.8 50.6 63.3 25.2 32.0 54.3 70.0 50 40 23 19 v f at 100 amps peak is 3.5 volts maximum at 8.3 ms half - sine wave. bidirectional microsemi part number standoff voltage (note 1) v wm v olts maximum reverse leakage @v wm i d a minimum* breakdown voltage @ 1.0 ma v (br) (min) v olts maximum clamping voltage (fig. 2) i pp1 = 1a v c v olts maximum clamping voltage (fig. 2) @ i pp2 = 10a v c v olts maximum peak pulse current i pp3 a 1n6366 1n6367 1n6368 mpt - 10c mpt - 12c mpt - 15c 10.0 12.0 15.0 2 2 2 11.7 1 4.1 17.6 14.1 16.7 20.8 14.5 17.1 21.4 90 70 60 1n6369 1n6370 1n6371 1n6372 mpt - 18c mpt - 22c mpt - 36c mpt - 45c 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.8 30.8 50.6 63.3 25.5 32.0 54.3 70.0 50 40 23 19 c s uffix indicates b idirectional note 1: tvs devices are normally selected according to the reverse stando ff v oltage ( v wm ) which should be equal to or greater than the dc or continuous peak operating voltage level. * the minimum breakdown voltage as shown takes into consideration the + volt to lerance normally specified for power supply regulation on most integrated circuit manufacturers data sheets. similar devices are available w ith reduced clamping voltages where tighter regulated power supply voltages are employed. downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 4 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c graphs t p C pulse time figure 1 peak pulse power vs pulse time i pp C peak pulse current C amps figure 2 typical characteristic clamping voltage vs. peak pulse current p pp - peak pulse power - kw v c C clamping voltage - volts downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 5 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c graphs time (t) in milliseconds figure 3 pulse w ave form for e xponential s urge v (br) C breakdown voltage C volts figure 4 typical capacitance vs. breakdown voltage (unidirectional types) pulse current (i p ) in percent of i pp c C capacitance C pico f arads downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 6 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c graphs v (br) C breakdown voltage C volts f igure 5 typical capacitance vs. breakdown voltage (bidirectional types) t l C l ead temperature c figure 6 steady - state and peak pulse power derating c urve c C capacitance C pico f arads steady -s tate and peak pulse p ower d issipation (watts) downloaded from: http:///
t4 - lds -0 292 , rev . 1 (1 2 1800 ) ?201 3 microsemi corporation page 7 of 7 1n6358 C 1n63 72 or mpt -10 C mpt -45c package dimensions notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general information only. 3. the major diameter is essentially constant along its length. 4. within this zone, diameter may vary to allow for lead finishes and irregularities. 5. dimension to allow for pinch or seal deformation anywhere along tubulation. 6. polarity s ymbol for transient suppressor. 7. lead 1 shall be electrically connected to the case. 8. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inches millimeters notes min max min max bd 0 .215 0 .235 5.46 5.97 bl 0 .293 0 .357 7.44 9.07 3 blt - 0 .570 - 14.48 cd 0 .045 0 .100 1.14 2.54 5 ld 0 .025 0 .035 0.64 0.89 ll 1.000 1.625 25.40 41.28 lu - 0 .188 - 4.78 4 downloaded from: http:///
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